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Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

United States Patent

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10,516,068
December 24, 2019
View the Complete Patent at the US Patent & Trademark Office
Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.
15/862,307
January 4, 2018
1/1;
H01L 21/02 (20060101); H01L 21/425 (20060101); H01L 21/465 (20060101); C30B 29/10 (20060101); H01L 31/115 (20060101); C30B 15/00 (20060101); C30B 13/00 (20060101); C30B 11/00 (20060101); C30B 33/08 (20060101); H01L 21/441 (20060101); H01L 31/032 (20060101); H01L 29/24 (20060101);
STATEMENT OF GOVERNMENTAL INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The U.S. Government has certain rights in the invention.