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Ionic floating-gate memory device

United States Patent

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December 3, 2019
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A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.
June 19, 2018
H01L 21/00 (20060101); H01L 45/00 (20060101); H01L 27/24 (20060101); G11C 13/00 (20060101);
STATEMENT OF GOVERNMENTAL INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The U.S. Government has certain writes in the invention.