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Ionic floating-gate memory device
United States Patent
10,497,866 | |
December 3, 2019 | |
View the Complete Patent at the US Patent & Trademark Office | |
A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element. | |
16/ 012,430 | |
June 19, 2018 | |
1/1 | |
H01L 21/00 (20060101)H01L 45/00 (20060101)H01L 27/24 (20060101)G11C 13/00 (20060101) | |
STATEMENT OF GOVERNMENTAL INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The U.S. Government has certain writes in the invention. |