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Ion-implanted thermal barrier

United States Patent

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September 17, 2019
View the Complete Patent at the US Patent & Trademark Office
Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.
August 21, 2018
H01L 23/34 (20060101); H01L 23/373 (20060101); H01L 21/265 (20060101);
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.