| Abstract: | Methods are provided for fabricating a HEMT (high-electron-mobility
transistor) that involve sequential epitaxial growth of III-nitride
channel and barrier layers, followed by epitaxial regrowth of further
III-nitride material through a window in a mask layer. In examples, the
regrowth takes place over exposed portions of the channel layer in the
source and drain regions of the device, and the regrown material has a
composition different from the barrier layer. In other examples, the
regrowth takes place on the barrier layer, only in the access region or
regions. Devices made according to the disclosed methods are also
provided. |