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Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

United States Patent

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10,388,753
August 20, 2019
View the Complete Patent at the US Patent & Trademark Office
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
15/921,007
March 14, 2018
1/1;
H01L 29/66 (20060101); H01L 21/18 (20060101); H01L 21/74 (20060101); H01L 21/02 (20060101); H01L 29/778 (20060101); H01L 21/203 (20060101); H01L 21/20 (20060101); H01L 21/306 (20060101);
STATEMENT OF GOVERNMENT INTEREST This invention was made with United States Government support under Contract No. DE-NA0003525 between National Technology & Engineering Solutions of Sandia, LLC and the United States Department of Energy/National Nuclear Security Administration. The United States Government has certain rights in this invention.