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Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture
United States Patent
| 10,214,415 | |
| February 26, 2019 | |
| View the Complete Patent at the US Patent & Trademark Office | |
| A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer. | |
| 15/910,531 | |
| March 2, 2018 | |
| 1/1; | |
| H01L 21/00 (20060101); B81B 7/00 (20060101); B81B 7/02 (20060101); B81C 1/00 (20060101); | |
| ACKNOWLEDGEMENT OF GOVERNMENT SUPPORT This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The U.S. Government has certain rights in the invention. |