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Electron spin-based information shuttling for a computer system

United States Patent

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June 19, 2018
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A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.
December 16, 2016
G06N 99/00 (20100101); B82Y 10/00 (20110101); H01L 29/24 (20060101); H01L 29/41 (20060101);
GOVERNMENT LICENSE RIGHTS This invention was made with United States Government support under Contract No. DE-AC04-94AL85000 between Sandia Corporation and the United States Department of Energy. The United States Government has certain rights in this invention.