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Superlattice photodetector having improved carrier mobility

United States Patent

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March 27, 2018
View the Complete Patent at the US Patent & Trademark Office
In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.
15/ 479,134
April 4, 2017
H01L 31/09 (20060101)H01L 31/0304 (20060101)H01L 31/0352 (20060101)H01L 31/18 (20060101)H01L 31/0224 (20060101)H01L 31/109 (20060101)
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in this invention.