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Diode and method of making the same

United States Patent

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9,917,149
March 13, 2018
View the Complete Patent at the US Patent & Trademark Office
A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.
15/166,783
May 27, 2016
1/1;
H01L 29/06 (20060101); H01L 29/866 (20060101); H01L 29/20 (20060101); H01L 29/66 (20060101); H01L 21/265 (20060101);
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.