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Ion-barrier for memristors/ReRAM and methods thereof

United States Patent

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November 28, 2017
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The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.
August 18, 2015
H01L 45/00 (20060101);
;257/2,4,613 ;438/190 ;365/148
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.