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Method of making thermally-isolated silicon-based integrated circuits

United States Patent

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November 21, 2017
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Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
August 11, 2016
H01L 21/02 (20060101); H01L 23/34 (20060101); H01L 21/764 (20060101); H01L 21/3213 (20060101); H01L 21/762 (20060101); H01L 21/84 (20060101); H01L 21/306 (20060101); H01L 21/311 (20060101); B81C 1/00 (20060101); B81B 7/00 (20060101); H01L 21/8234 (20060101); H01L 41/047 (20060101); H01L 21/48 (20060101);
;257/467,401,470,577,622,468,469,415,420,428,429 ;438/400,50-55
GOVERNMENT LICENSE RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.