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Resistive field structures for semiconductor devices and uses therof

United States Patent

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9,761,675
September 12, 2017
View the Complete Patent at the US Patent & Trademark Office
The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.
14/989,633
January 6, 2016
1/1;
H01L 23/62 (20060101); H01L 29/778 (20060101); H01L 29/40 (20060101); H01L 29/205 (20060101); H01L 49/02 (20060101); H01L 23/31 (20060101); H01L 29/20 (20060101); H01L 27/06 (20060101);
;257/76,360
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the disclosure.