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Method of making a silicon nanowire device

United States Patent

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May 23, 2017
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There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation. The method, in examples, includes thinning the nanowire through iterative oxidation and etching of the oxidized portion.
November 17, 2016
H01L 29/06 (20060101); H01L 29/10 (20060101); H01L 29/78 (20060101); H01L 29/08 (20060101); G06N 3/067 (20060101); H01L 21/3065 (20060101); H01L 21/306 (20060101); H01L 29/423 (20060101);
NOTICE OF GOVERNMENT RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.