| Abstract: | Thermally isolated devices may be formed by performing a series of etches
on a silicon-based substrate. As a result of the series of etches,
silicon material may be removed from underneath a region of an integrated
circuit (IC). The removal of the silicon material from underneath the IC
forms a gap between remaining substrate and the integrated circuit,
though the integrated circuit remains connected to the substrate via a
support bar arrangement that suspends the integrated circuit over the
substrate. The creation of this gap functions to release the device from
the substrate and create a thermally-isolated integrated circuit. |