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Tuning and synthesis of semiconductor nanostructures by mechanical compression

United States Patent

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9,187,646
November 17, 2015
View the Complete Patent at the US Patent & Trademark Office
Pressure-Induced Fabrication of Nanomaterials
A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.
13/ 905,959
May 30, 2013
1/1
B05D 3/12 (20060101)C09C 1/04 (20060101)C09C 1/00 (20060101)C09C 1/10 (20060101)B82Y 40/00 (20110101)C09C 1/14 (20060101)B82Y 30/00 (20110101)
;427/355,359,365,369
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.