Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

United States Patent

8,425,681
April 23, 2013
View the Complete Patent at the US Patent & Trademark Office
Microsphere Templated Gallium Nitride Growth and Liftoff
A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.
12/388,103
February 18, 2009
117/96 ; 117/104; 117/98; 117/99;
C30B 21/04 (20060101);
117/96,98,99,104
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.