Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres
United States Patent
| 8,425,681 | |
| April 23, 2013 | |
| View the Complete Patent at the US Patent & Trademark Office | |
| Microsphere Templated Gallium Nitride Growth and Liftoff | |
| A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method. | |
| 12/388,103 | |
| February 18, 2009 | |
| 117/96 ; 117/104; 117/98; 117/99; | |
| C30B 21/04 (20060101); | |
| 117/96,98,99,104 | |
| The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation. |