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MIS-based sensors with hydrogen selectivity

United States Patent

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March 11, 2008
View the Complete Patent at the US Patent & Trademark Office
The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.
Li; Dongmei (Boulder, CO), Medlin; J. William (Boulder, CO), McDaniel; Anthony H. (Livermore, CA), Bastasz; Robert J. (Livermore, CA)
The Regents of the University of Colorado (Boulder, CO), The United States of America as represented by The United States Department of Energy (Washington, DC), N/A
February 24, 2006
G01N 7/00 (20060101);
ACKNOWLEDGEMENT OF GOVERNMENT SUPPORT This invention was funded, at least in part, by the United States Department of Energy under grant number DE-AC04-94AL85000. The U.S. government has certain rights in this invention.